NDDP010N25AZT4H
Manufacturer:
On Semiconductor
Mfr.Part #:
NDDP010N25AZT4H
Datasheet:
Description:
MOSFETs TO-252-3 SMD/SMT N-Channel number of channels:1 1 W (Ta), 52 W (Tc) 250 V Continuous Drain Current (ID):10 A 16 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| Lead Free | Lead Free |
| RoHS | Compliant |
| Lifecycle Status | Production (Last Updated: 5 months ago) |
| Max Power Dissipation | 1 W |
| Power Dissipation | 1 W (Ta), 52 W (Tc) |
| Number of Channels | 1 |
| Input capacitance | 980 pF |
| Continuous Drain Current (ID) | 10 A |
| Rds On Max | 420 mΩ |
| Drain to Source Voltage (Vdss) | 250 V |
| Turn-On Delay Time | 18 ns |
| Turn-Off Delay Time | 44 ns |
| Rise Time | 26 ns |
| Gate Charge | 16 nC |
| Drain to Source Resistance | 320 mΩ |
| Gate to Source Voltage (Vgs) | 30 V |
| Drain to Source Breakdown Voltage (Vds) | 250 V |
| Schedule B | 8541290080 |
| Manufacturer Lifecycle Status | ACTIVE (Last Updated: 5 months ago) |
| Gate to Source Threshold Voltage | 2.5 V |
| FET Type(Transistor Polarity) | N-Channel |
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